国家/地区 England（3）
关键词 ATOMIC LAYER DEPOSITION（4）
出版物
出版时间 2017（2）
机构 UNIV CAMBRID.（3）
作者 HOFMANN S（4）

Sub-nanometer Atomic Layer Deposition for Spintronics in Magnetic Tunnel Junctions Based on Graphene Spin-Filtering Membranes

ACS NANO

MARTIN MB, DLUBAK B, WEATHERUP RS, YANG H, DERANLOT C, BOUZEHOUANE K, PETROFF F, ANANE A, HOFMANN S, ROBERTSON J, FERT A, SENEOR P

Atomic layer deposited oxide films as protective interface layers for integrated graphene transfer

NANOTECHNOLOGY

CABREROVILATELA A, ALEXANDERWEBBER JA, SAGADE AA, ARIA AI, BRAEUNINGERWEIMER P, MARTIN MB, WEATHERUP RS, HOFMANN S

Encapsulation of graphene transistors and vertical device integration by interface engineering with atomic layer deposited oxide

2D MATERIALS

ALEXANDERWEBBER JA, SAGADE AA, ARIA AI, VAN VELDHOVEN ZA, BRAEUNINGERWEIMER P, WANG RZ, CABREROVILATELA A, MARTIN MB, SUI JG, CONNOLLY MR, HOFMANN S

Parameter Space of Atomic Layer Deposition of Ultrathin Oxides on Graphene

ACS APPLIED MATERIALS INTERFACES

ARIA AI, NAKANISHI K, XIAO L, BRAEUNINGERWEIMER P, SAGADE AA, ALEXANDERWEBBER JA, HOFMANN S