国家/地区 China（5） India（3）
关键词 BIAXIAL STRAIN（11）
出版物
出版时间 2020（3） 2012（2） 2019（2）
机构 INDIAN INST .（2）
作者 BEHERA H（2） MUKHOPADHYAY.（2）

Graphene-Based Ultrasensitive Strain Sensors

ACS APPLIED ELECTRONIC MATERIALS

SINGH A, LEE S, WATANABE H, LEE H

Strain-driven dynamic stability and anomalous enhancement of thermal conductivity in graphene-like IIA-VI monolayer monoxides

JOURNAL OF PHYSICSCONDENSED MATTER

XIA CQ, ZHAO YS, MA DK, LI XL, ZHANG LF

Friction Reduction of Hydrogenated Graphene by Strain Engineering

TRIBOLOGY LETTERS

PENG Y, LI JH, TANG XQ, LIU B, CHEN XZ, BAI LC

Tunable Electronic Properties of Graphene/g-AlN Heterostructure: The Effect of Vacancy and Strain Engineering

NANOMATERIALS

LIU XF, ZHANG ZF, LUO ZJ, LV B, DING Z

Equi-biaxial compressive strain in graphene: Gruneisen parameter and buckling ridges

2D MATERIALS

JIANG T, WANG ZY, RUAN XL, ZHU Y

Tailoring the structural and electronic properties of a graphene-like ZnS monolayer using biaxial strain

JOURNAL OF PHYSICS DAPPLIED PHYSICS

BEHERA H, MUKHOPADHYAY G

Tunable band gap in half-fluorinated bilayer graphene under biaxial strains

COMPUTATIONAL MATERIALS SCIENCE

HU CH, ZHANG Y, LIU HY, WU SQ, YANG Y, ZHU ZZ

Strain-tunable band parameters of ZnO monolayer in graphene-like honeycomb structure

PHYSICS LETTERS A

BEHERA H, MUKHOPADHYAY G

Strain-dependent doping and optical absorption in Al-doped graphene-like ZnO monolayer

SOLID STATE COMMUNICATIONS

CHOWDHURY S, VENKATESWARAN P, SOMVANSHI D

Modulation of Schottky barrier in XSi2N4/graphene (X = Mo and W) heterojunctions by biaxial strain

CHINESE PHYSICS B

LIANG Q, LUO XY, WANG YX, LIANG YC, XIE Q