国家/地区
关键词 CHARGE CARRIER MOBILITY（2）
出版物
出版时间 2012（2）
机构
作者

Electrical Stress and Total Ionizing Dose Effects on Graphene-Based Non-Volatile Memory Devices

IEEE TRANSACTIONS ON NUCLEAR SCIENCE

ZHANG CX, ZHANG EX, FLEETWOOD DM, ALLES ML, SCHRIMPF RD, SONG EB, KIM SM, GALATSIS K, WANG KLW

Study of annealing temperature influence on the performance of top gated graphene/SiC transistors

SOLIDSTATE ELECTRONICS

CLAVEL M, POIROUX T, MOUIS M, BECERRA L, THOMASSIN JL, ZENASNI A, LAPERTOT G, ROUCHON D, LAFOND D, FAYNOT O