国家/地区 Usa（3）
关键词 COMPACT MODEL（3）
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Current Saturation in Submicrometer Graphene Transistors with Thin Gate Dielectric: Experiment, Simulation, and Theory

ACS NANO

HAN SJ, REDDY D, CARPENTER GD, FRANKLIN AD, JENKINS KA

Noise Modeling of Graphene Resonant Channel Transistors

IEEE TRANSACTIONS ON ELECTRON DEVICES

LEKAS M, LEE S, CHA W, HONE J, SHEPARD K

Hybrid Modeling and Sensitivity Analysis on Reduced Graphene Oxide Field-Effect Transistor

IEEE TRANSACTIONS ON NANOTECHNOLOGY

WANG C, PU HH, SUI XY, ZHOU SY, CHEN JH