国家/地区 China（2） Malaysia（2）
关键词 CONDUCTION MECHANISM（4）
出版物 ORGANIC ELECTRONICS（2）
出版时间 2016（2）
机构 HANYANG UNIV（2） UNIV KEBANGS.（2）
作者 OOI PC（4）

Fabrication of transparent bistable switching memory device using plasmapolymerized hexamethyldisiloxane layers with embedded graphene quantum dots

THIN SOLID FILMS

OOI PC, WEE MFMR, DEE CF, YAP CC, SALLEH MM, MAJLIS BY

Reduced graphene oxide preparation and its applications in solution-processed write-once-read-many-times graphene-based memory device

CARBON

OOI PC, HANIFF MASM, WEE MFMR, DEE CF, GOH BT, MOHAMED MA, MAJLIS BY

Tristable switching of the electrical conductivity through graphene quantum dots sandwiched in multi-stacked poly(methyl methacrylate) layers

ORGANIC ELECTRONICS

OOI PC, LIN J, KIM TW, LI FS

Indium-tin-oxide, free, flexible, nonvolatile memory devices based on graphene quantum dots sandwiched between polymethylsilsesquioxane layers

ORGANIC ELECTRONICS

OOI PC, LIN J, KIM TW, LI FS