国家/地区 Japan（8）
关键词 CONTACT RESISTANCE（8）
出版物 SOLIDSTATE ELECTRON.（2）
出版时间 2010（3）
机构 TOHOKU UNIV（2） UNIV TOKYO（2）
作者 HANDA H（2） KANG HC（2） KARASAWA H（2） MIYAMOTO Y（2）
OTSUJI T（2） SUEMITSU M（2） SUEMITSU T（2）

A Study on Graphene-Metal Contact

CRYSTALS

LIU WJ, WEI J, SUN XW, YU HY

Low contact resistance metals for graphene based devices

DIAMOND RELATED MATERIALS

WATANABE E, CONWILL A, TSUYA D, KOIDE Y

Epitaxial graphene top-gate FETs on silicon substrates

SOLIDSTATE ELECTRONICS

KANG HC, KARASAWA H, MIYAMOTO Y, HANDA H, FUKIDOME H, SUEMITSU T, SUEMITSU M, OTSUJI T

Epitaxial graphene field-effect transistors on silicon substrates

SOLIDSTATE ELECTRONICS

KANG HC, KARASAWA H, MIYAMOTO Y, HANDA H, SUEMITSU T, SUEMITSU M, OTSUJI T

Contact resistance in graphene-based devices

PHYSICA ELOWDIMENSIONAL SYSTEMS NANOSTRUCTURES

RUSSO S, CRACIUN MF, YAMAMOTO M, MORPURGO AF, TARUCHA S

Contact resistance at planar metal contacts on bilayer graphene and effects of molecular insertion layers

NANOTECHNOLOGY

NOUCHI R

Analysis on Non-Ideal Nonlinear Characteristics of Graphene-Based Three-Branch Nano-Junction Device

IEICE TRANSACTIONS ON ELECTRONICS

YIN X, SATO M, KASAI S

Theoretical study of spreading resistance using anisotropic conductivity parameters for graphene: a comparative study against conventional isotropic conductors

JAPANESE JOURNAL OF APPLIED PHYSICS

SEKI K, KUBO T, YE N, SHIMIZU T