国家/地区 Iran（2）
关键词 CUTOFF FREQUENCY（2）
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Improvement in the performance of graphene nanoribbon p-i-n tunneling field effect transistors by applying lightly doped profile on drain region

INTERNATIONAL JOURNAL OF MODERN PHYSICS B

NADERI A

Asymmetric bilayer graphene nanoribbon MOSFETs for analog and digital electronics

SUPERLATTICES MICROSTRUCTURES

DINARVAND A, AHMADI V, DARVISH G