| 国家/地区 | India(2) |
| 关键词 |
DDR(3)
|
| 出版物 | |
| 出版时间 | |
| 机构 | |
| 作者 | GHIVELA GC(2) SENGUPTA J(2) |
Modeling and computation of double drift region transit time diode performance based on graphene-SiC
INTERNATIONAL JOURNAL OF NUMERICAL MODELLINGELECTRONIC NETWORKS DEVICES FIELDS
GHIVELA GC, SENGUPTA J
SUPERLATTICES MICROSTRUCTURES
GHIVELA GC, SENGUPTA J
NANOTOXICOLOGY
FRONTINANRUBIO J, GARCIACARPINTERO S, GONZALEZ VJ, VAZQUEZ E, DURANPRADO M
