国家/地区 Japan（3）
关键词 DIRECT GROWTH（3）
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Direct graphene synthesis on a Si/SiO2 substrate by a simple annealing process

MATERIALS RESEARCH EXPRESS

IKUTA T, GUMI K, OHNO Y, MAEHASHI K, INOUE K, MATSUMOTO K

Direct Growth of Doping-Density-Controlled Hexagonal Graphene on SiO2 Substrate by Rapid-Heating Plasma CVD

ACS NANO

KATO T, HATAKEYAMA R

Effect of Growth Pressure on Graphene Direct Growth on an A-Plane Sapphire Substrate: Implications for Graphene-Based Electronic Devices

ACS APPLIED NANO MATERIALS

UEDA Y, MARUYAMA T, NARITSUKA S