国家/地区 Italy（3）
关键词 DOPING（4）
出版物
出版时间 2019（2）
机构
作者 GIANNAZZO F（4）

Extensive Fermi-Level Engineering for Graphene through the Interaction with Aluminum Nitrides and Oxides

PHYSICA STATUS SOLIDIRAPID RESEARCH LETTERS

SCIUTO A, LA MAGNA A, ANGILELLA GGN, PUCCI R, GRECO G, ROCCAFORTE F, GIANNAZZO F, DERETZIS I

Raman probing of hydrogen-intercalated graphene on Si-face 4H-SiC

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

SHTEPLIUK I, IVANOV IG, IAKIMOV T, YAKIMOVA R, KAKANAKOVAGEORGIEVA A, FIORENZA P, GIANNAZZO F

Graphene-SiO2 Interaction from Composites to Doping

PHYSICA STATUS SOLIDI AAPPLICATIONS MATERIALS SCIENCE

ARMANO A, BUSCARINO G, CANNAS M, GELARDI FM, GIANNAZZO F, SCHILIRO E, LO NIGRO R, AGNELLO S

Insight into the mechanisms of chemical doping of graphene on silicon carbide

NANOTECHNOLOGY

GIANNAZZO F