国家/地区 China（2）
关键词 EDGE CONTACT（2）
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Electronic transport across metal-graphene edge contact

2D MATERIALS

GONG C, ZHANG CX, OH YJ, WANG WC, LEE G, SHAN B, WALLACE RM, CHO K

The in-plane graphene and borophene beta(12) contacted sub-10 nm monolayer black phosphorous Schottky barrier field-effect transistors

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

LI W, WEI JL, CHEN W, JING SC, PAN JH, BIAN B, LIAO B, WANG GL