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Comparison Between NIST Graphene and AIST GaAs Quantized Hall Devices

IEEE TRANSACTIONS ON INSTRUMENTATION MEASUREMENT

OE T, RIGOSI AF, KRUSKOPF M, WU BY, LEE HY, YANG YF, ELMQUIST RE, KANEKO NH, JARRETT DG

Carrier recombination and generation rates for intravalley and intervalley phonon scattering in graphene

PHYSICAL REVIEW B

RANA F, GEORGE PA, STRAIT JH, DAWLATY J, SHIVARAMAN S, CHANDRASHEKHAR M, SPENCER MG