国家/地区 Italy（3） Iran（2）
关键词 ELECTRON DEVICE（5）
出版物 ECS JOURNAL OF SOLI.（2）
出版时间 2013（2）
机构 UNIV PISA（3）
作者 FIORI G（3） IANNACCONE G（3） BRUZZONE S（2） DIDEBAN D（2）

An Analytical Approach for Current Modeling in a Single Electron Transistor (SET) Utilizing Graphene Nanoscroll (GNS) as the Island

ECS JOURNAL OF SOLID STATE SCIENCE TECHNOLOGY

KHADEMHOSSEINI V, DIDEBAN D, AHMADI MT

Multiscale Modeling for Graphene-Based Nanoscale Transistors

PROCEEDINGS OF THE IEEE

FIORI G, IANNACCONE G

Very Large Current Modulation in Vertical Heterostructure Graphene/hBN Transistors

IEEE TRANSACTIONS ON ELECTRON DEVICES

FIORI G, BRUZZONE S, IANNACCONE G

Lateral Graphene-hBCN Heterostructures as a Platform for Fully Two-Dimensional Transistors

ACS NANO

FIORI G, BETTI A, BRUZZONE S, IANNACCONE G

Reducing Ambipolar Conduction in a Graphene Tunneling Field Effect Transistor (GTFET) via Bandgap Engineering

ECS JOURNAL OF SOLID STATE SCIENCE TECHNOLOGY

MAZROUEI M, DIDEBAN D, JOOYPA H