国家/地区 Japan（4）
关键词 ELECTRONIC STRUCTURE（4）
出版物 APPLIED PHYSICS EXP.（2）
出版时间 2020（3）
机构 UNIV TSUKUBA（4）
作者 MARUYAMA M（4）

Electronic structure of graphene under periodic uniaxial tensile strain

JAPANESE JOURNAL OF APPLIED PHYSICS

TOMORI H, MARUYAMA M, OKADA S

Asymmetric carrier penetration into hexagonal boron nitride in graphene field-effect transistors

APPLIED PHYSICS EXPRESS

OKADA S, MARUYAMA M, GAO YL

Influence of interlayer stacking arrangements on carrier accumulation in bilayer graphene field effect transistors

APPLIED PHYSICS EXPRESS

GAO YL, MARUYAMA M, OKADA S

Band-Gap Engineering of Graphene Heterostructures by Substitutional Doping with B3N3

CHEMPHYSCHEM

SAWAHATA H, MARUYAMA M, CUONG NT, OMACHI H, SHINOHARA H, OKADA S