国家/地区 China（6）
关键词 ENERGY BAND（10）
出版物 CHINESE PHYSICS B（2）
出版时间 2010（2） 2022（2）
机构
作者 AMARILLAS AP（2） GALVAN DH（2） JOSEYACAMAN .（2） MEJIA S（2）

Effect of mechanical stresses on graphene-based devices

INTERNATIONAL JOURNAL OF NUMERICAL MODELLINGELECTRONIC NETWORKS DEVICES FIELDS

ZHENG Y, VALERIO G, REN ZX

Electronic band gap and transport in graphene superlattice with a Gaussian profile potential voltage

CHINESE PHYSICS B

ZHANG YP, YIN YH, LU HH, ZHANG HY

Effects of vacancy defects on graphene nanoribbon field effect transistor

MICRO NANO LETTERS

CHANG S, ZHANG YJ, HUANG QJ, WANG H, WANG GF

Preparation and Modification of Graphene on Substrate

PROGRESS IN CHEMISTRY

TIAN Y, ZHAO QY, HU J, ZHOU C, MIAO L, JIANG JJ

Study of Vacancies and Pd Atom Decoration on the Electronic Properties of Bilayer Graphene

JOURNAL OF SUPERCONDUCTIVITY NOVEL MAGNETISM

GALVAN DH, AMARILLAS AP, NUNEZGONZALEZ R, MEJIA S, JOSEYACAMAN M

Effect of Proton Irradiation on Graphene Layers

FULLERENES NANOTUBES CARBON NANOSTRUCTURES

GALVAN DH, AMARILLAS AP, MEJIA S, WING C, JOSEYACAMAN M

One-dimensional method of investigating the localized states in armchair graphene-like nanoribbons with defects

CHINESE PHYSICS B

XIE Y, HU ZJ, DING WH, LU XL, XIE H

Optical Study of Few-Layer Graphene Treated by Oxygen Plasma

PHYSICA STATUS SOLIDI BBASIC SOLID STATE PHYSICS

NIU YK, BI KX, LI QN, ZHOU SY, MU JL, TAN LG, MEI LY

Tunable Schottky barrier in a graphene/AlP van der Waals heterostructure

SEMICONDUCTOR SCIENCE TECHNOLOGY

ZHANG ZC, SHI TL, HE JJ, LIU CS, MENG L, YAN XH

Assessment of polarization-related band modulation at graphene/Mn-doped BiFeO3 interfaces by photoemission electron microscopy

JAPANESE JOURNAL OF APPLIED PHYSICS

NAKASHIMA S, ITO T, OHKOCHI T, FUJISAWA H