国家/地区 China（3）
关键词 EPITAXIAL GRAPHENE（3）
出版物
出版时间 2014（3）
机构
作者

Spectroscopic and scanning probe analysis on large-area epitaxial graphene grown under pressure of 4 mbar on 4H-SiC (0001) substratesl

CHINESE PHYSICS B

WANG DC, ZHANG YM

Quasi-equilibrium growth of monolayer epitaxial graphene on SiC (0001)

ACTA PHYSICA SINICA

YU C, LI J, LIU QB, CAI SJ, FENG ZH

Incorporating Isolated Molybdenum (Mo) Atoms into Bilayer Epitaxial Graphene on 4H-SiC(0001)

ACS NANO

WAN W, LI H, HUANG H, WONG SH, LV L, GAO YL, WEE ATS