国家/地区 Germany（6）
关键词 EPITAXIAL GRAPHENE（6）
出版物
出版时间 2021（2）
机构 PHYS TECH BU.（3）
作者 PIERZ K（6）

Silicon Carbide Stacking-Order-Induced Doping Variation in Epitaxial Graphene

ADVANCED FUNCTIONAL MATERIALS

PAKDEHI DM, SCHADLICH P, NGUYEN TTN, ZAKHAROV AA, WUNDRACK S, NAJAFIDEHAGHANI E, SPECK F, PIERZ K, SEYLLER T, TEGENKAMP C, SCHUMACHER HW

Homogeneous Large-Area Quasi-Free-Standing Monolayer and Bilayer Graphene on SiC

ACS APPLIED NANO MATERIALS

PAKDEHI DM, PIERZ K, WUNDRACK S, APROJANZ J, NGUYEN TTN, DZIOMBA T, HOHLS F, BAKIN A, STOSCH R, TEGENKAMP C, AHLERS FJ, SCHUMACHER HW

Epitaxial graphene on SiC: modification of structural and electron transport properties by substrate pretreatment

JOURNAL OF PHYSICSCONDENSED MATTER

KRUSKOPF M, PIERZ K, WUNDRACK S, STOSCH R, DZIOMBA T, KALMBACH CC, MULLER A, BARINGHAUS J, TEGENKAMP C, AHLERS FJ, SCHUMACHER HW

Graphene Quantum Hall Effect Devices for AC and DC Electrical Metrology

IEEE TRANSACTIONS ON ELECTRON DEVICES

KRUSKOPF M, BAUER S, PIMSUT Y, CHATTERJEE A, PATEL DK, RIGOSI AF, ELMQUIST RE, PIERZ K, PESEL E, GOTZ M, SCHURR J

Impact of Polymer-Assisted Epitaxial Graphene Growth on Various Types of SiC Substrates

ACS APPLIED ELECTRONIC MATERIALS

CHATTERJEE A, KRUSKOPF M, WUNDRACK S, HINZE P, PIERZ K, STOSCH R, SCHERER H

Unraveling the origin of local variations in the step resistance of epitaxial graphene on SiC: a quantitative scanning tunneling potentiometry study

CARBON

SINTERHAUF A, TRAEGER GA, MOMENI D, PIERZ K, SCHUMACHER HW, WENDEROTH M