国家/地区 Usa（3）
关键词 EPITAXIAL GRAPHENE EG（6）
出版物 IEEE TRANSACTIONS O.（2）
出版时间 2019（2）
机构 NIST（2）
作者 ELMQUIST RE（2） JARRETT DG（2） KRUSKOPF M（2） LEE HY（2）
RIGOSI AF（2） WU BY（2） YANG YF（2）

Comparison Between NIST Graphene and AIST GaAs Quantized Hall Devices

IEEE TRANSACTIONS ON INSTRUMENTATION MEASUREMENT

OE T, RIGOSI AF, KRUSKOPF M, WU BY, LEE HY, YANG YF, ELMQUIST RE, KANEKO NH, JARRETT DG

Graphene Devices for Tabletop and High-Current Quantized Hall Resistance Standards

IEEE TRANSACTIONS ON INSTRUMENTATION MEASUREMENT

RIGOSI AF, PANNA AR, PAYAGALA SU, KRUSKOPF M, KRAFT ME, JONES GR, WU BY, LEE HY, YANG YF, HU JN, JARRETT DG, NEWELL DB, ELMQUIST RE

Bismuth mediated defect engineering of epitaxial graphene on SiC(0001)

CARBON

HU TW, MA DY, FANG QL, ZHANG P, LIU XT, WEI R, PAN Y, XU KW, MA F

p-Type Electrical Transport of Chemically Doped Epitaxial Graphene Nanoribbons

IEEE ELECTRON DEVICE LETTERS

BRYAN SE, BRENNER K, YANG YX, MURALI R, MEINDL JD

Non-invasive on-skin sensors for brain machine interfaces with epitaxial graphene

JOURNAL OF NEURAL ENGINEERING

FAISAL SN, AMJADIPOUR M, IZZO K, SINGER JA, BENDAVID A, LIN CT, IACOPI F

Raman investigation of substrate-induced strain in epitaxially grown graphene on low/high miscut angled silicon carbide and its application perspectives

OPTICAL MATERIALS

KHADKA IB, RAI KB, ALSARDIA MM, HAQ BU, KIM SH