国家/地区 Usa（2）
关键词 FET（2）
出版物
出版时间 2012（2）
机构
作者

Electrical Stress and Total Ionizing Dose Effects on Graphene-Based Non-Volatile Memory Devices

IEEE TRANSACTIONS ON NUCLEAR SCIENCE

ZHANG CX, ZHANG EX, FLEETWOOD DM, ALLES ML, SCHRIMPF RD, SONG EB, KIM SM, GALATSIS K, WANG KLW

Graphene Field-Effect Transistors on Undoped Semiconductor Substrates for Radiation Detection

IEEE TRANSACTIONS ON NANOTECHNOLOGY

FOXE M, LOPEZ G, CHILDRES I, JALILIAN R, PATIL A, ROECKER C, BOGUSKI J, JOVANOVIC I, CHEN YP