国家/地区 China（2）
关键词 FIELD EFFECT TRANSISTOR（2）
出版物
出版时间 2013（2）
机构
作者

Effects of vacancy defects on graphene nanoribbon field effect transistor

MICRO NANO LETTERS

CHANG S, ZHANG YJ, HUANG QJ, WANG H, WANG GF

Reduced graphene oxide with a highly restored pi-conjugated structure for inkjet printing and its use in all-carbon transistors

NANO RESEARCH

SU Y, DU JH, SUN DM, LIU C, CHENG HM