国家/地区 India（4）
关键词 FIELD EFFECT TRANSISTOR（4）
出版物 IEEE SENSORS JOURNA.（2）
出版时间 2021（4）
机构
作者

A novel approach towards molecular memory device in gate tunable structure of MoS2-graphene

NANO RESEARCH

TRIPATHI R, MISRA A

Fabrication Strategies and Measurement Techniques for Performance Improvement of Graphene/Graphene Derivative Based FET Gas Sensor Devices: A Review

IEEE SENSORS JOURNAL

BHATTACHARYYA P

Metal/Metal Oxide Modified Graphene Nanostructures for Electrical Biosensing Applications: A Review

IEEE SENSORS JOURNAL

CHAKRABORTY B, ROYCHAUDHURI C

2D HfN2/graphene interface based Schottky device: Unmatched controllability in electrical contacts and carrier concentration via electrostatic gating and out-of-plane strain

APPLIED SURFACE SCIENCE

MOHANTA MK, SARKAR AD