国家/地区 China（4）
关键词 FIELD EFFECT TRANSISTOR（4）
出版物 CHINESE PHYSICS B（2）
出版时间 2016（2）
机构 CHINESE ACAD SCI（4）
作者

Reduced graphene oxide with a highly restored pi-conjugated structure for inkjet printing and its use in all-carbon transistors

NANO RESEARCH

SU Y, DU JH, SUN DM, LIU C, CHENG HM

Depositing aluminum as sacrificial metal to reduce metal-graphene contact resistance

CHINESE PHYSICS B

MAO DC, JIN Z, WANG SQ, ZHANG DY, SHI JY, PENG SA, WANG XY

Intrinsic photo-conductance triggered by the plasmonic effect in graphene for terahertz detection

NANOTECHNOLOGY

WANG L, CHEN XS, LU W

Room-temperature terahertz detection based on CVD graphene transistor

CHINESE PHYSICS B

YANG XX, SUN JD, QIN H, LV L, SU LN, YAN B, LI XX, ZHANG ZP, FANG JY