国家/地区 China（5）
关键词 FIELD EFFECT TRANSISTOR（5）
出版物 ACTA PHYSICA SINICA（5）
出版时间 2017（2）
机构
作者

Graphene-based field effect transistor with ion-gel film gate

ACTA PHYSICA SINICA

SONG H, LIU J, CHEN C, BA L

Field effect transistor photodetector based on graphene and perovskite quantum dots

ACTA PHYSICA SINICA

ZHENG JJ, WANG YR, YU KH, XU XX, SHENG XX, HU ET, WEI W

Research progress of graphene radio frequency devices

ACTA PHYSICA SINICA

LU Q, LYU HM, WU XM, WU HQ, QIAN H

Research status and development graphene devices using silicon as the subtrate

ACTA PHYSICA SINICA

WU P, HU X, ZHANG J, SUN LF

Characterization and preliminary application of top-gated graphene ion-sensitive field effect transistors

ACTA PHYSICA SINICA

WU CY, DU XW, ZHOU L, CAI Q, JIN Y, TANG L, ZHANG HG, HU GH, JIN QH