国家/地区
关键词 FIELD EFFECT TRANSISTOR（4）
出版物 PHYSICAL REVIEW B（4）
出版时间 2009（4）
机构
作者

Electronic spin transport in graphene field-effect transistors

PHYSICAL REVIEW B

POPINCIUC M, JOZSA C, ZOMER PJ, TOMBROS N, VELIGURA A, JONKMAN HT, VAN WEES BJ

Graphene bilayer field-effect phototransistor for terahertz and infrared detection

PHYSICAL REVIEW B

RYZHII V, RYZHII M

I-V curve signatures of nonequilibrium-driven band gap collapse in magnetically ordered zigzag graphene nanoribbon two-terminal devices

PHYSICAL REVIEW B

ARESHKIN DA, NIKOLIC BK

Contact resistance and shot noise in graphene transistors

PHYSICAL REVIEW B

CAYSSOL J, HUARD B, GOLDHABERGORDON D