国家/地区 China（3）
关键词 FIELDEFFECT TRANSISTOR（4）
出版物 ACS APPLIED ELECTRONIC MATERIALS（4）
出版时间 2023（2）
机构
作者 DUAN R（2） GUO HT（2） LI PK（2） QI WH（2）
RU GL（2）

Facilitated Interfacial Electronic Processes by the pi-pi Stacked Edge-on Tetrabenzoporphyrin/Graphene Layer Enables Broadband Ultrasensitive Photodetecting with Prompt Response

ACS APPLIED ELECTRONIC MATERIALS

SHAO MY, YU M, SUZUKI M, YAMADA H, WANG YP, CHEN Y, LU C, WANG D, YANG ZY

Origins of Leakage Currents on Electrolyte-Gated Graphene Field-Effect Transistors

ACS APPLIED ELECTRONIC MATERIALS

SVETLOVA A, KIREEV D, BELTRAMO G, MAYER D, OFFENHAUSSER A

Excellent Optoelectronic Properties and Low Contact Resistance of Graphene/MoS2 Heterostructure Optoelectronic Devices: First- Principles Calculation and Experimental Verification

ACS APPLIED ELECTRONIC MATERIALS

LI PK, GUO HT, DUAN R, RU GL, QI WH

Excellent Optoelectronic Properties and Low Contact Resistance of Graphene/MoS2 Heterostructure Optoelectronic Devices: First- Principles Calculation and Experimental Verification

ACS APPLIED ELECTRONIC MATERIALS

LI PK, GUO HT, DUAN R, RU GL, QI WH