国家/地区 Korea（2）
关键词 FIELDEFFECT TRANSISTOR FET（2）
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出版时间
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Effect of Temperature and Humidity on NO2 and NH3 Gas Sensitivity of Bottom-Gate Graphene FETs Prepared by ICP-CVD

IEEE ELECTRON DEVICE LETTERS

KIM CH, YOO SW, NAM DW, SEO S, LEE JH

Hysteretic behavior of all CVD h-BN/graphene/h-BN heterostructure field-effect transistors by interfacial charge trap

SURFACES INTERFACES

KIM S, KIM B, PARK S, CHANG WS, KANG HY, KIM S, LEE HB, KIM S