国家/地区
关键词 FIELDEFFECT TRANSISTOR FET（2）
出版物
出版时间 2017（2）
机构
作者

Investigating the Mobility of Trilayer Graphene Nanoribbon in Nanoscale FETs

JOURNAL OF ELECTRONIC MATERIALS

RAHMANI M, FARD HG, AHMADI MT, RAHBARPOUR S, HABIBIYAN H, VARMAZYARI V, RAHMANI K

Impact of Contact Resistance on the f(T) and f(max) of Graphene Versus MoS2 Transistors

IEEE TRANSACTIONS ON NANOTECHNOLOGY

HOLLAND KD, ALAM AU, PAYDAVOSI N, WONG M, ROGERS CM, RIZWAN S, KIENLE D, VAIDYANATHAN M