国家/地区 Sweden（5） Algeria（2）
关键词 FIELDEFFECT TRANSISTORS FETS（13）
出版物 IEEE TRANSACTIONS O.（4） IEEE ELECTRON DEVIC.（2） IEEE TRANSACTIONS O.（2）
出版时间 2011（2） 2014（2） 2019（2） 2020（2）
机构 CHALMERS UNI.（3）
作者 STAKE J（5） ANDERSSON MA（2） HABIBPOUR O（2） TAMERSIT K（2）
VOROBIEV A（2） VUKUSIC J（2）

Amplified Methanol Sensitivity in Reduced Graphene Oxide FET Using Appropriate Gate Electrostatic

IEEE TRANSACTIONS ON ELECTRON DEVICES

HAZRA A

Describing Broadband Terahertz Response of Graphene FET Detectors by a Classical Model

IEEE TRANSACTIONS ON TERAHERTZ SCIENCE TECHNOLOGY

YANG XX, VOROBIEV A, JEPPSON K, STAKE J

A computationally efficient hybrid approach based on artificial neural networks and the wavelet transform for quantum simulations of graphene nanoribbon FETs

JOURNAL OF COMPUTATIONAL ELECTRONICS

TAMERSIT K, DJEFFAL F

Atomic Layer Deposition Alumina-Mediated Graphene Transfer for Reduced Process Contamination

PHYSICA STATUS SOLIDIRAPID RESEARCH LETTERS

SHIVAYOGIMATH A, ERIKSSON L, WHELAN PR, MACKENZIE DMA, LUO BR, BOGGILD P, BOOTH TJ

Hysteresis-Free Nanosecond Pulsed Electrical Characterization of Top-Gated Graphene Transistors

IEEE TRANSACTIONS ON ELECTRON DEVICES

CARRION EA, SEROV AY, ISLAM S, BEHNAM A, MALIK A, XIONG F, BIANCHI M, SORDAN R, POP E

Fabrication of integrated field-effect transistors and detecting system based on CVD grown graphene

SENSORS ACTUATORS BCHEMICAL

YUE WW, JIANG SZ, XU SC, BAI CJ

Resistive Graphene FET Subharmonic Mixers: Noise and Linearity Assessment

IEEE TRANSACTIONS ON MICROWAVE THEORY TECHNIQUES

ANDERSSON MA, HABIBPOUR O, VUKUSIC J, STAKE J

Mobility Improvement and Microwave Characterization of a Graphene Field Effect Transistor With Silicon Nitride Gate Dielectrics

IEEE ELECTRON DEVICE LETTERS

HABIBPOUR O, CHEREDNICHENKO S, VUKUSIC J, STAKE J

Understanding Asymmetric Transportation Behavior in Graphene Field-Effect Transistors Using Scanning Kelvin Probe Microscopy

IEEE ELECTRON DEVICE LETTERS

LIU WJ, YU HY, XU SH, ZHANG Q, ZOU X, WANG JL, PEY KL, WEI J, ZHU HL, LI MF

A Semianalytical Model of Bilayer-Graphene Field-Effect Transistor

IEEE TRANSACTIONS ON ELECTRON DEVICES

CHELI M, FIORI G, IANNACCONE G