国家/地区 Germany（2）
关键词 GALLIUM NITRIDE（2）
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Efficient Nitrogen Doping of Single-Layer Graphene Accompanied by Negligible Defect Generation for Integration into Hybrid Semiconductor Heterostructures

ACS APPLIED MATERIALS INTERFACES

SARAU G, HEILMANN M, BASHOUTI M, LATZEL M, TESSAREK C, CHRISTIANSEN S

Remote Epitaxy of Cubic Gallium Nitride on Graphene-Covered 3C-SiC Substrates by Plasma-Assisted Molecular Beam Epitaxy

PHYSICA STATUS SOLIDI BBASIC SOLID STATE PHYSICS

LITTMANN M, REUTER D, AS DJ