国家/地区 Germany（5）
关键词 GAN（5）
出版物
出版时间
机构 MAX PLANCK I.（2）
作者 HEILMANN M（3） LATZEL M（3） SARAU G（3） BACHER G（2）
CHRISTIANSEN.（2） CONIBEER G（2） MERTIN W（2） MISCHKE J（2）
TESSAREK C（2）

Direct growth of graphene on GaN via plasma-enhanced chemical vapor deposition under N(2)atmosphere

2D MATERIALS

MISCHKE J, PENNINGS J, WEISENSEEL E, KERGER P, ROHWERDER M, MERTIN W, BACHER G

GaN-Based Nanorods/Graphene Heterostructures for Optoelectronic Applications

PHYSICA STATUS SOLIDI BBASIC SOLID STATE PHYSICS

SARAU G, HEILMANN M, LATZEL M, TESSAREK C, CHRISTIANSEN S

Significant performance enhancement of InGaN/GaN nanorod LEDs with multi-layer graphene transparent electrodes by alumina surface passivation

NANOTECHNOLOGY

LATZEL M, BUTTNER P, SARAU G, HOFLICH K, HEILMANN M, CHEN W, WEN X, CONIBEER G, CHRISTIANSEN SH

Vertically Oriented Growth of GaN Nanorods on Si Using Graphene as an Atomically Thin Buffer Layer

NANO LETTERS

HEILMANN M, MUNSHI AM, SARAU G, GOBELT M, TESSAREK C, FAUSKE VT, VAN HELVOORT ATJ, YANG JF, LATZEL M, HOFFMANN B, CONIBEER G, WEMAN H, CHRISTIANSEN S

Graphene as a Transparent Conductive Electrode in GaN-Based LEDs

MATERIALS

ZHANG HH, MISCHKE J, MERTIN W, BACHER G