国家/地区 Russia（2）
关键词 GAN（2）
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Remote epitaxy using graphene enables growth of stress-free GaN

NANOTECHNOLOGY

JOURNOT T, OKUNO H, MOLLARD N, MICHON A, DAGHER R, GERGAUD P, DIJON J, KOLOBOV AV, HYOT B

Few-Layer Graphene as an Efficient Buffer for GaN/AlN Epitaxy on a SiO2/Si Substrate: A Joint Experimental and Theoretical Study

APPLIED SCIENCESBASEL

BORISENKO DP, GUSEV AS, KARGIN NI, DOBROKHOTOV PL, TIMOFEEV AA, LABUNOV VA, MIKHALIK MM, KATIN KP, MASLOV MM, DZHUMAEV PS, KOMISSAROV IV