国家/地区 China（3） Korea（2）
关键词 GAN（9）
出版物 NANO LETTERS（2）
出版时间 2016（9）
机构
作者 XU K（2）

Stress analysis of transferable crack-free gallium nitride microrods grown on graphene/SiC substrate

MATERIALS LETTERS

QI L, XU Y, LI ZY, ZHAO E, YANG S, CAO B, ZHANG JC, WANG JF, XU K

Surface plasmon enhanced graphene/p-GaN heterostructure light-emitting diode by Ag nano-particles

NANO ENERGY

WU ZQ, LU YH, XU WL, ZHANG YJ, LI JF, LIN SS

ZnO nanorods/graphene/Ni/Au hybrid structures as transparent conductive layer in GaN LED for low work voltage and high light extraction

SOLIDSTATE ELECTRONICS

XU K, XIE YY, MAA HL, DUA YX, ZENG FG, DING P, GAO ZY, XU C, SUN J

Epitaxy of GaN Nanowires on Graphene

NANO LETTERS

KUMARESAN V, LARGEAU L, MADOURI A, GLAS F, ZHANG HZ, OEHLER F, CAVANNA A, BABICHEV A, TRAVERS L, GOGNEAU N, TCHERNYCHEVA M, HARMAND JC

Fabrication and characterization of graphene/AlGaN/GaN ultraviolet Schottky photodetector

JOURNAL OF PHYSICS DAPPLIED PHYSICS

KUMAR M, JEONG H, POLAT K, OKYAY AK, LEE D

Successful Fabrication of GaN Epitaxial Layer on Non-Catalytically-grown Graphene

BULLETIN OF THE KOREAN CHEMICAL SOCIETY

HWANG SW, CHOI SH

Role of graphene interlayers in mitigating degradation of Ni/Au ohmic contact morphology on p-type GaN

VACUUM

MORROW WK, LEE C, DENBAARS SP, REN F, PEARTON SJ

Vertically Oriented Growth of GaN Nanorods on Si Using Graphene as an Atomically Thin Buffer Layer

NANO LETTERS

HEILMANN M, MUNSHI AM, SARAU G, GOBELT M, TESSAREK C, FAUSKE VT, VAN HELVOORT ATJ, YANG JF, LATZEL M, HOFFMANN B, CONIBEER G, WEMAN H, CHRISTIANSEN S

Enhanced Thermionic Emission and Low 1/f Noise in Exfoliated Graphene/GaN Schottky Barrier Diode

ACS APPLIED MATERIALS INTERFACES

KUMAR A, KASHID R, GHOSH A, KUMAR V, SINGH R