国家/地区
关键词 GATE DIELECTRIC（2）
出版物 ACS NANO（2）
出版时间
机构
作者

Integration of Hexagonal Boron Nitride with Quasi-freestanding Epitaxial Graphene: Toward Wafer-Scale, High-Performance Devices

ACS NANO

BRESNEHAN MS, HOLLANDER MJ, WETHERINGTON M, LABELLA M, TRUMBULL KA, CAVALERO R, SNYDER DW, ROBINSON JA

Quantum Capacitance Limited Vertical Scaling of Graphene Field-Effect Transistor

ACS NANO

XU HL, ZHANG ZY, WANG ZX, WANG S, HANG XL, PENG LM