国家/地区 Iran（3）
关键词 GNRFET（3）
出版物
出版时间 2017（3）
机构
作者

Improvement in the performance of graphene nanoribbon p-i-n tunneling field effect transistors by applying lightly doped profile on drain region

INTERNATIONAL JOURNAL OF MODERN PHYSICS B

NADERI A

Design and Characterization of Graphene Nano-Ribbon Based D-Flip-Flop

JOURNAL OF NANOELECTRONICS OPTOELECTRONICS

KASHANI SAS, ALIDASH HK, MIRYALA S

A novel graphene nanoribbon FET with an extra peak electric field (EFP-GNRFET) for enhancing the electrical performances

PHYSICS LETTERS A

ESHKALAK MA, ANVARIFARD MK