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WANG H, SU LM, YAGMURCUKARDES M, CHEN JW, JIANG Y, LI Z, QUAN AC, PEETERS FM, WANG C, GEIM AK, HU S
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VAZIRI S, CHEN V, CAI LL, JIANG Y, CHEN ME, GRADY RW, ZHENG XL, POP E
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WANG XX, PENG GT, CHEN MM, ZHAO M, HE Y, JIANG Y, ZHANG XZ, QIN Y, LIN SJ
Global Control of Stacking-Order Phase Transition by Doping and Electric Field in Few-Layer Graphene
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LI HY, UTAMA MIB, WANG S, ZHAO WY, ZHAO SH, XIAO X, JIANG Y, JIANG LL, TANIGUCHI T, WATANABE K, WEBERBARGIONI A, ZETTL A, WANG F
Gate Leakage Suppression and Breakdown Voltage Enhancement in p-GaN HEMTs Using Metal/Graphene Gates
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ZHOU GN, WAN ZY, YANG GY, JIANG Y, SOKOLOVSKIJ R, YU HY, XIA GR
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