NANO LETTERS
WANG H, SU LM, YAGMURCUKARDES M, CHEN JW, JIANG Y, LI Z, QUAN AC, PEETERS FM, WANG C, GEIM AK, HU S
CHEMOSPHERE
WANG XX, PENG GT, CHEN MM, ZHAO M, HE Y, JIANG Y, ZHANG XZ, QIN Y, LIN SJ
Gate Leakage Suppression and Breakdown Voltage Enhancement in p-GaN HEMTs Using Metal/Graphene Gates
IEEE TRANSACTIONS ON ELECTRON DEVICES
ZHOU GN, WAN ZY, YANG GY, JIANG Y, SOKOLOVSKIJ R, YU HY, XIA GR
DIAMOND RELATED MATERIALS
SHU XF, ZHOU J, LIU Y, WANG YQ, HU B, JIANG Y, KONG LB, ZHANG TS, SONG HX
ACTA CRYSTALLOGRAPHICA SECTION CSTRUCTURAL CHEMISTRY
HUANG RT, WU CH, HUANG SS, CHEN DY, ZHANG Q, WANG Q, HU ZJ, JIANG Y, ZHAO B, CHEN ZW
CONSTRUCTION BUILDING MATERIALS
JIN M, JIANG Y, JIANG LH, CHU HQ, ZHI FF, GAO S
CHEMICAL ENGINEERING JOURNAL
TIAN H, BAO WT, JIANG Y, WANG L, ZHANG L, SHA O, WU CQ, GAO FM
ADVANCED MATERIALS
XU XZ, YI D, WANG ZC, YU JC, ZHANG ZH, QIAO RX, SUN ZH, HU ZH, GAO P, PENG HL, LIU ZF, YU DP, WANG EG, JIANG Y, DING F, LIU KH
ACS APPLIED MATERIALS INTERFACES
ZHONG X, YU HY, WANG XD, LIU L, JIANG Y, WANG L, ZHUANG GL, CHU YQ, LI XN, WANG JG
ELECTROCHIMICA ACTA
ZHANG Y, WEN FF, JIANG Y, WANG L, ZHOU CH, WANG HG