国家/地区 France（4）
关键词 GRAPHENE（5）
出版物 NANOTECHNOLOGY（2）
出版时间 2014（2） 2015（2）
机构 UNIV PARIS 1.（3）
作者 NGUYEN HV（5）

Conduction gap in graphene strain junctions: direction dependence

SEMICONDUCTOR SCIENCE TECHNOLOGY

NGUYEN MC, NGUYEN VH, NGUYEN HV, DOLLFUS P

Improved performance of graphene transistors by strain engineering

NANOTECHNOLOGY

NGUYEN VH, NGUYEN HV, DOLLFUS P

Enhanced Seebeck effect in graphene devices by strain and doping engineering

PHYSICA ELOWDIMENSIONAL SYSTEMS NANOSTRUCTURES

NGUYEN MC, NGUYEN VH, NGUYEN HV, SAINTMARTIN J, DOLLFUS P

Strain-induced conduction gap in vertical devices made of misoriented graphene layers

NANOTECHNOLOGY

NGUYEN VH, NGUYEN HV, SAINTMARTIN J, DOLLFUS P

Quantum interference of electrons through electric-field-induced edge states in stacked graphene nanoribbons

PHYSICA SCRIPTA

NGUYEN MC, NGUYEN HV