国家/地区 Sweden（4）
关键词 GRAPHENE（4）
出版物 IEEE ELECTRON DEVICE LETTERS（4）
出版时间
机构 CHALMERS UNI.（2）
作者 STAKE J（4）

Graphene Field-Effect Transistors With High Extrinsic f(T) and f(max)

IEEE ELECTRON DEVICE LETTERS

BONMANN M, ASAD M, YANG XX, GENERALOV A, VOROBIEV A, BANSZERUS L, STAMPFER C, OTTO M, NEUMAIER D, STAKE J

A Subharmonic Graphene FET Mixer

IEEE ELECTRON DEVICE LETTERS

HABIBPOUR O, CHEREDNICHENKO S, VUKUSIC J, YHLAND K, STAKE J

Mobility Improvement and Microwave Characterization of a Graphene Field Effect Transistor With Silicon Nitride Gate Dielectrics

IEEE ELECTRON DEVICE LETTERS

HABIBPOUR O, CHEREDNICHENKO S, VUKUSIC J, STAKE J

Graphene FET on Diamond for High-Frequency Electronics

IEEE ELECTRON DEVICE LETTERS

ASAD M, MAJDI S, VOROBIEV A, JEPPSON K, ISBERG J, STAKE J