国家/地区 England（5）
关键词 GRAPHENE（5）
出版物
出版时间 2017（2）
机构 UNIV CAMBRID.（3）
作者 MARTIN MB（5）

Graphene-Passivated Nickel as an Oxidation-Resistant Electrode for Spintronics

ACS NANO

DLUBAK B, MARTIN MB, WEATHERUP RS, YANG H, DERANLOT C, BLUME R, SCHLOEGL R, FERT A, ANANE A, HOFMANN S, SENEOR P, ROBERTSON J

Atomic layer deposited oxide films as protective interface layers for integrated graphene transfer

NANOTECHNOLOGY

CABREROVILATELA A, ALEXANDERWEBBER JA, SAGADE AA, ARIA AI, BRAEUNINGERWEIMER P, MARTIN MB, WEATHERUP RS, HOFMANN S

Encapsulation of graphene transistors and vertical device integration by interface engineering with atomic layer deposited oxide

2D MATERIALS

ALEXANDERWEBBER JA, SAGADE AA, ARIA AI, VAN VELDHOVEN ZA, BRAEUNINGERWEIMER P, WANG RZ, CABREROVILATELA A, MARTIN MB, SUI JG, CONNOLLY MR, HOFMANN S

Towards a Graphene-Based Low Intensity Photon Counting Photodetector

SENSORS

WILLIAMS JOD, ALEXANDERWEBBER JA, LAPINGTON JS, ROY M, HUTCHINSON IB, SAGADE AA, MARTIN MB, BRAEUNINGERWEIMER P, CABREROVILATELA A, WANG RZ, DE LUCA A, UDREA F, HOFMANN S

Determining the Proximity Effect-Induced Magnetic Moment in Graphene by Polarized Neutron Reflectivity and X-ray Magnetic Circular Dichroism

ACS APPLIED MATERIALS INTERFACES

ABOLJADAYEL ROM, KINANE CJ, VAZ CAF, LOVE DM, WEATHERUP RS, BRAEUNINGERWEIMER P, MARTIN MB, IONESCU A, CARUANA AJ, CHARLTON TR, LLANDRO J, MONTEIRO PMS, BARNES CHW, HOFMANN S, LANGRIDGE S