国家/地区 France（3）
关键词 GRAPHENE（3）
出版物
出版时间 2015（2）
机构 UNIV PARIS 11（3）
作者 NGUYEN HV（3）

Conduction gap in graphene strain junctions: direction dependence

SEMICONDUCTOR SCIENCE TECHNOLOGY

NGUYEN MC, NGUYEN VH, NGUYEN HV, DOLLFUS P

Enhanced Seebeck effect in graphene devices by strain and doping engineering

PHYSICA ELOWDIMENSIONAL SYSTEMS NANOSTRUCTURES

NGUYEN MC, NGUYEN VH, NGUYEN HV, SAINTMARTIN J, DOLLFUS P

Strain-induced conduction gap in vertical devices made of misoriented graphene layers

NANOTECHNOLOGY

NGUYEN VH, NGUYEN HV, SAINTMARTIN J, DOLLFUS P