国家/地区 Singapore（4）
关键词 GRAPHENE（4）
出版物 IEEE ELECTRON DEVIC.（2）
出版时间
机构 NATL UNIV SINGAPORE（4）
作者 LAM KT（4）

Graphene Nanoribbon Tunneling Field-Effect Transistors With a Semiconducting and a Semimetallic Heterojunction Channel

IEEE TRANSACTIONS ON ELECTRON DEVICES

DA HX, LAM KT, SAMUDRA G, CHIN SK, LIANG GC

Electrostatics of Ultimately Thin-Body Tunneling FET Using Graphene Nanoribbon

IEEE ELECTRON DEVICE LETTERS

LAM KT, YANG Y, SAMUDRA GS, YEO YC, LIANG GC

A Simulation Study of Graphene-Nanoribbon Tunneling FET With Heterojunction Channel

IEEE ELECTRON DEVICE LETTERS

LAM KT, SEAH D, CHIN SK, KUMAR SB, SAMUDRA G, YEO YC, LIANG G

Shape effects in graphene nanoribbon resonant tunneling diodes: A computational study

JOURNAL OF APPLIED PHYSICS

TEONG H, LAM KT, KHALID SB, LIANG GC