国家/地区 Spain（10）
关键词 GRAPHENE（10）
出版物 IEEE TRANSACTIONS O.（6） 2D MATERIALS（2）
出版时间 2016（3） 2011（2） 2019（2） 2020（2）
机构 UNIV AUTONOMA BARCELONA（10）
作者 JIMENEZ D（10）

Experimental Observation and Modeling of the Impact of Traps on Static and Analog/HF Performance of Graphene Transistors

IEEE TRANSACTIONS ON ELECTRON DEVICES

PACHECOSANCHEZ A, MAVREDAKIS N, FEIJOO PC, WEI W, PALLECCHI E, HAPPY H, JIMENEZ D

Non-Quasi-Static Effects in Graphene Field-Effect Transistors Under High-Frequency Operation

IEEE TRANSACTIONS ON ELECTRON DEVICES

PASADAS F, JIMENEZ D

Velocity. Saturation' Effect on. Low.Frequency Noise in. Short Channel Single Layer Graphene Field Effect Transistors

ACS APPLIED ELECTRONIC MATERIALS

MAVREDAKIS N, WEI W, PALLECCHI E, VIGNAUD D, HAPPY H, CORTADELLA RG, CALIA AB, GARRIDO JA, JIMENEZ D

Large-Signal Model of the Metal-Insulator-Graphene Diode Targeting RF Applications

IEEE ELECTRON DEVICE LETTERS

PASADAS F, SAEED M, HAMED A, WANG ZX, NEGRA R, NEUMAIER D, JIMENEZ D

Explicit Drain Current, Charge and Capacitance Model of Graphene Field-Effect Transistors

IEEE TRANSACTIONS ON ELECTRON DEVICES

JIMENEZ D

Explicit Drain-Current Model of Graphene Field-Effect Transistors Targeting Analog and Radio-Frequency Applications

IEEE TRANSACTIONS ON ELECTRON DEVICES

JIMENEZ D, MOLDOVAN O

Large-Signal Model of Graphene Field-Effect Transistors-Part I: Compact Modeling of GFET Intrinsic Capacitances

IEEE TRANSACTIONS ON ELECTRON DEVICES

PASADAS F, JIMENEZ D

Large-Signal Model of Graphene Field-Effect Transistors-Part II: Circuit Performance Benchmarking

IEEE TRANSACTIONS ON ELECTRON DEVICES

PASADAS F, JIMENEZ D

Short channel effects in graphene-based field effect transistors targeting radio-frequency applications

2D MATERIALS

FEIJOO PC, JIMENEZ D, CARTOIXA X

A physics-based model of gate-tunable metal-graphene contact resistance benchmarked against experimental data

2D MATERIALS

CHAVES FA, JIMENEZ D, SAGADE AA, KIM W, RIIKONEN J, LIPSANEN H, NEUMAIER D