国家/地区 Korea（3）
关键词 GRAPHENE（3）
出版物 JOURNAL OF NANOSCIE.（2）
出版时间 2019（3）
机构 HANYANG UNIV（2）
作者 PARK W（3）

Advantages of a buried-gate structure for graphene field-effect transistor

SEMICONDUCTOR SCIENCE TECHNOLOGY

LEE SK, KIM YJ, HEO S, PARK W, YOO TJ, CHO C, HWANG HJ, LEE BH

A Stretchable Graphene Thin-Film Sensor for Detecting All of Lateral and Vertical Strains

JOURNAL OF NANOSCIENCE NANOTECHNOLOGY

CHUN S, SON W, PARK W

A Flexible Graphene-Polydimethylsiloxane Nanocomposite Force Sensor with Linear Response Across a Wide Pressure Detection Range

JOURNAL OF NANOSCIENCE NANOTECHNOLOGY

BANG S, LIM J, CHUN S, PARK W