国家/地区 Usa（2）
关键词 GRAPHENE FET（2）
出版物
出版时间 2012（2）
机构
作者

Electrical Stress and Total Ionizing Dose Effects on Graphene-Based Non-Volatile Memory Devices

IEEE TRANSACTIONS ON NUCLEAR SCIENCE

ZHANG CX, ZHANG EX, FLEETWOOD DM, ALLES ML, SCHRIMPF RD, SONG EB, KIM SM, GALATSIS K, WANG KLW

Current Saturation in Submicrometer Graphene Transistors with Thin Gate Dielectric: Experiment, Simulation, and Theory

ACS NANO

HAN SJ, REDDY D, CARPENTER GD, FRANKLIN AD, JENKINS KA