国家/地区
关键词 GRAPHENE FIELDEFFECT TRANSISTOR（3）
出版物
出版时间 2012（3）
机构
作者

Device Performance of Graphene Nanoribbon Field-Effect Transistors in the Presence of Line-Edge Roughness

IEEE TRANSACTIONS ON ELECTRON DEVICES

GOHARRIZI AY, POURFATH M, FATHIPOUR M, KOSINA H

Investigating the Mechanism of Hysteresis Effect in Graphene Electrical Field Device Fabricated on SiO2 Substrates using Raman Spectroscopy

SMALL

XU H, CHEN YB, ZHANG J, ZHANG HL

Atomistic Boron-Doped Graphene Field-Effect Transistors: A Route toward Unipolar Characteristics

ACS NANO

MARCONCINI P, CRESTI A, TRIOZON F, FIORI G, BIEL B, NIQUET YM, MACUCCI M, ROCHE S