国家/地区 Usa（2）
关键词 GRAPHENE FIELDEFFECT TRANSISTOR（4）
出版物 IEEE TRANSACTIONS ON ELECTRON DEVICES（4）
出版时间
机构 UNIV FLORIDA（2）
作者 GUO J（2） YOON Y（2）

Small-Signal Capacitance and Current Parameter Modeling in Large-Scale High-Frequency Graphene Field-Effect Transistors

IEEE TRANSACTIONS ON ELECTRON DEVICES

ZEBREV GI, TSELYKOVSKIY AA, BATMANOVA DK, MELNIK EV

Device Performance of Graphene Nanoribbon Field-Effect Transistors in the Presence of Line-Edge Roughness

IEEE TRANSACTIONS ON ELECTRON DEVICES

GOHARRIZI AY, POURFATH M, FATHIPOUR M, KOSINA H

Performance comparison of graphene nanoribbon FETs with Schottky contacts and doped reservoirs

IEEE TRANSACTIONS ON ELECTRON DEVICES

YOON Y, FIORI G, HONG S, IANNACCONE G, GUO J

Scaling behaviors of graphene nanoribbon FETs: A three-dimensional quantum simulation study

IEEE TRANSACTIONS ON ELECTRON DEVICES

OUYANG Y, YOON Y, GUO J