国家/地区 China（2）
关键词 GRAPHENE FIELDEFFECT TRANSISTOR GFET（2）
出版物
出版时间
机构
作者 WANG Q（2）

Performance and breakdown behavior of graphene field-effect transistors with thin gate oxides

JOURNAL OF MICROMECHANICS MICROENGINEERING

WANG Q, LIU S, ZHANG J, ZHU J, GE DH, REN NF

Investigating electrical performance and breakdown characteristic of graphene field-effect transistor with different oxides structure

PHYSICS LETTERS A

FU YZ, LI ZX, WANG Q