国家/地区 China（2）
关键词 GRAPHENE FIELDEFFECT TRANSISTOR GFET（6）
出版物 IEEE TRANSACTIONS ON ELECTRON DEVICES（6）
出版时间
机构
作者

Experimental Observation and Modeling of the Impact of Traps on Static and Analog/HF Performance of Graphene Transistors

IEEE TRANSACTIONS ON ELECTRON DEVICES

PACHECOSANCHEZ A, MAVREDAKIS N, FEIJOO PC, WEI W, PALLECCHI E, HAPPY H, JIMENEZ D

Exploiting Negative Differential Resistance in Monolayer Graphene FETs for High Voltage Gains

IEEE TRANSACTIONS ON ELECTRON DEVICES

GRASSI R, GNUDI A, DI LECCE V, GNANI E, REGGIANI S, BACCARANI G

Pseudosaturation and Negative Differential Conductance in Graphene Field-Effect Transistors

IEEE TRANSACTIONS ON ELECTRON DEVICES

ALARCON A, NGUYEN VH, BERRADA S, QUERLIOZ D, SAINTMARTIN J, BOURNEL A, DOLLFUS P

Thermally Evaporated SiO Serving as Gate Dielectric in Graphene Field-Effect Transistors

IEEE TRANSACTIONS ON ELECTRON DEVICES

YANG LT, WANG HB, ZHANG XJ, LI YX, CHEN XF, XU XG, ZHAO X, SONG AM

Properties of Self-Aligned Short-Channel Graphene Field-Effect Transistors Based on Boron-Nitride-Dielectric Encapsulation and Edge Contacts

IEEE TRANSACTIONS ON ELECTRON DEVICES

CHARI T, MERIC I, DEAN C, SHEPARD K

Integrating Homogeneous Current-Saturation Graphene Transistors Into High-Linearity Amplifiers

IEEE TRANSACTIONS ON ELECTRON DEVICES

WANG C, WANG FQ, XIE YT, XING RQ, JIA Y, ZHANG WW, ZHANG B, HAN TT, YE WX