国家/地区
关键词 GROWTH（2）
出版物
出版时间 2022（2）
机构
作者

Triethylborane as Single Boron and Carbon Source Toward Stable and Homogeneous Boron-Doped Graphene

PHYSICA STATUS SOLIDI AAPPLICATIONS MATERIALS SCIENCE

ZAN R

Transfer-Free CVD Growth of High-Quality Wafer-Scale Graphene at 300 degrees C for Device Mass Fabrication

ACS APPLIED MATERIALS INTERFACES

QIAN FS, DENG J, DONG YB, XU C, HU LC, FU GS, CHANG PY, XIE YY, SUN J