国家/地区 Usa（3）
关键词 HALL MOBILITY（3）
出版物
出版时间 2010（3）
机构
作者

Empirical Study of Hall Bars on Few-Layer Graphene on C-Face 4H-SiC

JOURNAL OF ELECTRONIC MATERIALS

BOLEN ML, SHEN T, GU JJ, COLBY R, STACH EA, YE PD, CAPANO MA

Wafer-scale epitaxial graphene growth on the Si-face of hexagonal SiC (0001) for high frequency transistors

JOURNAL OF VACUUM SCIENCE TECHNOLOGY B

DIMITRAKOPOULOS C, LIN YM, GRILL A, FARMER DB, FREITAG M, SUN YN, HAN SJ, CHEN ZH, JENKINS KA, ZHU Y, LIU ZH, MCARDLE TJ, OTT JA, WISNIEFF R, AVOURIS P

Structured epitaxial graphene growth on SiC by selective graphitization using a patterned AlN cap

APPLIED PHYSICS LETTERS

RUBIOROY M, ZAMAN F, HU YK, BERGER C, MOSELEY MW, MEINDL JD, DE HEER WA